- 您现在的位置：买卖IC网 > Sheet目录463 > IXTK62N25 (IXYS)MOSFET N-CH 250V 62A TO-264
IXTK 62N25
Symbol Test Conditions
(T J = 25°C unless otherwise specified)
Characteristic values
Min. Typ. Max.
TO-264 Outline
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
V DS = 10 V; I D = 0.5 I D25 , pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
R G = 1.5 ? (External)
35
47
5400
1100
400
30
25
115
S
pF
pF
pF
ns
ns
ns
t f
15
ns
Dim.
Millimeter
Min. Max.
Min.
Inches
Max.
Q G(on)
Q GS
Q GD
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
240
40
120
nC
nC
nC
A
A1
A2
b
b1
b2
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
c
0.53 0.83
.021 .033
R thJC
R thCK
0.15
0.30 K/W
K/W
D
E
e
J
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
1.020 1.030
.780 .786
.215 BSC
.000 .010
K
L
L1
0.00 0.25
20.32 20.83
2.29 2.59
.000 .010
.800 .820
.090 .102
Source-Drain Diode
Symbol Test Conditions
Ratings and Characteristics
(T J = 25°C unless otherwise specified)
Min. Typ. Max.
P
Q
Q1
R
R1
3.17 3.66
6.07 6.27
8.38 8.69
3.81 4.32
1.78 2.29
.125 .144
.239 .247
.330 .342
.150 .170
.070 .090
I S
V GS = 0V
62
A
S
T
6.04 6.30
1.57 1.83
.238 .248
.062 .072
I SM
V SD
t rr
Q rr
Repetitive; pulse width limited by T JM
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
I F = 30A, -di/dt = 100 A/μs, V R = 100V
360
6
248
1.5
A
V
ns
μ C
Note: IXTK62N25 MOSFET will be
supplied in either package
outline at the discretion of the
vendor.
TO-264 Alternate Outline
Note: Leads and tab are solder
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,381,025
6,162,665
6,306,728 B1 6,534,343
6,683,344
one or moreof the following U.S. patents:
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,486,715
6,259,123 B1 6,404,065 B1
6,583,505
6,710,405B2
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXTK75N30
MOSFET N-CH 300V 75A TO-264
IXTK80N25
MOSFET N-CH 250V 80A TO-264
IXTK82N25P
MOSFET N-CH 250V 82A TO-264
IXTK8N150L
MOSFET N-CH 1500V 8A TO-264
IXTK90N15
MOSFET N-CH 150V 90A TO-264
IXTL2X180N10T
MOSFET N-CH 100V ISOPLUS I5-PAK
IXTL2X200N085T
MOSFET N-CH 85V ISOPLUS I5-PAK
IXTL2X220N075T
MOSFET N-CH 75V ISOPLUS I5-PAK
相关代理商/技术参数
IXTK74N20
制造商:IXYS 制造商全称:IXYS Corporation 功能描述:High Current MegaMOSFET
IXTK75N30
功能描述:MOSFET 75 Amps 300V 0.042 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTK80N25
功能描述:MOSFET 80 Amps 250V 0.033 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTK82N25P
功能描述:MOSFET 82 Amps 250V 0.035 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTK88N30P
功能描述:MOSFET 88 Amps 300V 0.04 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTK8N150L
功能描述:MOSFET 8 Amps 1500V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTK90N15
功能描述:MOSFET 90 Amps 150V 0.016 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTK90N25L2
功能描述:MOSFET 90 Amps 250V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube